Selective ionization of group I elements from laser ablated plumes of RbGaSb, K3Ga3As4, and K4In4As6
Identifieur interne : 015F66 ( Main/Repository ); précédent : 015F65; suivant : 015F67Selective ionization of group I elements from laser ablated plumes of RbGaSb, K3Ga3As4, and K4In4As6
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Abstract
Experimental results are reported on the I-III-V Zintl compounds RbGaSb, K3Ga3As4, and K4In4As6 with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of RbGaSb) and at 266 nm (in the case of K3Ga3As4 and K4In4As6), selective gas-phase ionization and removal of the group I elements is clearly demonstrated. © 1998 American Institute of Physics.
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Ga<sub>3</sub>
As<sub>4</sub>
, and K<sub>4</sub>
In<sub>4</sub>
As<sub>6</sub>
</title>
<author><name sortKey="Panayotov, Valentin" uniqKey="Panayotov V">Valentin Panayotov</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Chemistry, Tulane University, New Orleans, Louisiana 70118</s1>
<sZ>1 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Louisiane</region>
</placeName>
<wicri:cityArea>Department of Chemistry, Tulane University, New Orleans</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Hamar, Kyle" uniqKey="Hamar K">Kyle Hamar</name>
</author>
<author><name sortKey="Red, Clarence" uniqKey="Red C">Clarence Red</name>
</author>
<author><name sortKey="Birdwhistell, Teresa L T" uniqKey="Birdwhistell T">Teresa L. T. Birdwhistell</name>
</author>
<author><name sortKey="Koplitz, Brent" uniqKey="Koplitz B">Brent Koplitz</name>
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<date when="1998-05-01">1998-05-01</date>
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<term>Gallium compounds</term>
<term>Indium compounds</term>
<term>Ionization potential</term>
<term>Laser ablation technique</term>
<term>Potassium compounds</term>
<term>Rubidium compounds</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>7920D</term>
<term>6180B</term>
<term>Etude expérimentale</term>
<term>Rubidium composé</term>
<term>Potassium composé</term>
<term>Gallium composé</term>
<term>Indium composé</term>
<term>Méthode ablation laser</term>
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<front><div type="abstract" xml:lang="en">Experimental results are reported on the I-III-V Zintl compounds RbGaSb, K<sub>3</sub>
Ga<sub>3</sub>
As<sub>4</sub>
, and K<sub>4</sub>
In<sub>4</sub>
As<sub>6</sub>
with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of RbGaSb) and at 266 nm (in the case of K<sub>3</sub>
Ga<sub>3</sub>
As<sub>4</sub>
and K<sub>4</sub>
In<sub>4</sub>
As<sub>6</sub>
), selective gas-phase ionization and removal of the group I elements is clearly demonstrated. © 1998 American Institute of Physics.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Selective ionization of group I elements from laser ablated plumes of RbGaSb, K<sub>3</sub>
Ga<sub>3</sub>
As<sub>4</sub>
, and K<sub>4</sub>
In<sub>4</sub>
As<sub>6</sub>
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<fA11 i1="04" i2="1"><s1>BIRDWHISTELL (Teresa L. T.)</s1>
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<fA11 i1="05" i2="1"><s1>KOPLITZ (Brent)</s1>
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<fA14 i1="01"><s1>Department of Chemistry, Tulane University, New Orleans, Louisiana 70118</s1>
<sZ>1 aut.</sZ>
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<fA20><s1>4974-4979</s1>
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<fA21><s1>1998-05-01</s1>
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<fC01 i1="01" l="ENG"><s0>Experimental results are reported on the I-III-V Zintl compounds RbGaSb, K<sub>3</sub>
Ga<sub>3</sub>
As<sub>4</sub>
, and K<sub>4</sub>
In<sub>4</sub>
As<sub>6</sub>
with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of RbGaSb) and at 266 nm (in the case of K<sub>3</sub>
Ga<sub>3</sub>
As<sub>4</sub>
and K<sub>4</sub>
In<sub>4</sub>
As<sub>6</sub>
), selective gas-phase ionization and removal of the group I elements is clearly demonstrated. © 1998 American Institute of Physics.</s0>
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