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Selective ionization of group I elements from laser ablated plumes of RbGaSb, K3Ga3As4, and K4In4As6

Identifieur interne : 015F66 ( Main/Repository ); précédent : 015F65; suivant : 015F67

Selective ionization of group I elements from laser ablated plumes of RbGaSb, K3Ga3As4, and K4In4As6

Auteurs : RBID : Pascal:98-0198266

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English descriptors

Abstract

Experimental results are reported on the I-III-V Zintl compounds RbGaSb, K3Ga3As4, and K4In4As6 with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of RbGaSb) and at 266 nm (in the case of K3Ga3As4 and K4In4As6), selective gas-phase ionization and removal of the group I elements is clearly demonstrated. © 1998 American Institute of Physics.

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Pascal:98-0198266

Le document en format XML

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<title xml:lang="en" level="a">Selective ionization of group I elements from laser ablated plumes of RbGaSb, K
<sub>3</sub>
Ga
<sub>3</sub>
As
<sub>4</sub>
, and K
<sub>4</sub>
In
<sub>4</sub>
As
<sub>6</sub>
</title>
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<name sortKey="Panayotov, Valentin" uniqKey="Panayotov V">Valentin Panayotov</name>
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<s1>Department of Chemistry, Tulane University, New Orleans, Louisiana 70118</s1>
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<country xml:lang="fr">États-Unis</country>
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<wicri:cityArea>Department of Chemistry, Tulane University, New Orleans</wicri:cityArea>
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<author>
<name sortKey="Hamar, Kyle" uniqKey="Hamar K">Kyle Hamar</name>
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<author>
<name sortKey="Red, Clarence" uniqKey="Red C">Clarence Red</name>
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<author>
<name sortKey="Birdwhistell, Teresa L T" uniqKey="Birdwhistell T">Teresa L. T. Birdwhistell</name>
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<name sortKey="Koplitz, Brent" uniqKey="Koplitz B">Brent Koplitz</name>
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<div type="abstract" xml:lang="en">Experimental results are reported on the I-III-V Zintl compounds RbGaSb, K
<sub>3</sub>
Ga
<sub>3</sub>
As
<sub>4</sub>
, and K
<sub>4</sub>
In
<sub>4</sub>
As
<sub>6</sub>
with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of RbGaSb) and at 266 nm (in the case of K
<sub>3</sub>
Ga
<sub>3</sub>
As
<sub>4</sub>
and K
<sub>4</sub>
In
<sub>4</sub>
As
<sub>6</sub>
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<sub>3</sub>
Ga
<sub>3</sub>
As
<sub>4</sub>
, and K
<sub>4</sub>
In
<sub>4</sub>
As
<sub>6</sub>
with respect to laser ablation and subsequent laser ionization/removal processes. The approach takes advantage of the low ionization potentials of the group I elements to achieve selectivity and exert a measure of control over neutral mixtures. A 308 nm laser pulse is used to ablate a I-III-V Zintl compound, while a second laser is used to selectively ionize the ejected species within the extraction region of a time-of-flight mass spectrometer. With the second laser operating at 248 nm (in the case of RbGaSb) and at 266 nm (in the case of K
<sub>3</sub>
Ga
<sub>3</sub>
As
<sub>4</sub>
and K
<sub>4</sub>
In
<sub>4</sub>
As
<sub>6</sub>
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